基于0.13µm SiGe BiCMOS工艺的100GHz锁相环

Shinwon Kang, Jun-Chau Chien, A. Niknejad
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引用次数: 20

摘要

在0.13 μ m SiGe BiCMOS工艺中实现了完全集成的100GHz锁相环(PLL)。该锁相环采用基频差分科尔皮茨压控振荡器(VCO),调谐范围为8.3%,在10MHz偏置时相位噪声为- 124.5dBc/Hz,单端输出功率为3dBm。在90-100GHz的VCO中,该VCO的FoM是最好的。设计了工作频率为50GHz ~ 130GHz的米勒分频器,采用吉尔伯特混频器鉴相器衰减参考杂散。锁相环的总锁相范围为92.7 ~ 100.2GHz,在1MHz偏置时相位噪声为- 102dBc/Hz,参考杂散不可见。锁相环的功耗为570mW,占用1.21mm2。
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A 100GHz phase-locked loop in 0.13µm SiGe BiCMOS process
A fully integrated 100GHz phase-locked loop (PLL) is demonstrated in 0.13µm SiGe BiCMOS process. The PLL employs a fundamental-frequency differential Colpitts voltage-controlled oscillator (VCO) with 8.3% tuning range, which achieves a phase noise of −124.5dBc/Hz at 10MHz offset, and a single-ended output power of 3dBm. The FoM of this VCO is the best among 90–100GHz VCOs. A Miller divider, operating from 50GHz up to 130GHz, is designed and the Gilbert-mixer phase detector is used to attenuate reference spurs. The total lock range of the PLL is from 92.7 to 100.2GHz, the phase noise is −102dBc/Hz at 1MHz offset, and reference spurs are not observable. The PLL dissipates 570mW and occupies 1.21mm2.
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