Lu Zhou, Yunhua Wang, Baoshan Jia, Duanyuan Bai, Xin Gao, B. Bo, Z. Qiao
{"title":"用化学和等离子体方法对砷化镓半导体激光器进行小面钝化","authors":"Lu Zhou, Yunhua Wang, Baoshan Jia, Duanyuan Bai, Xin Gao, B. Bo, Z. Qiao","doi":"10.1109/ICOOM.2012.6316213","DOIUrl":null,"url":null,"abstract":"To remove the cavity surface contamination of semiconductor lasers and improve their COD threshold, the novel sulfur solution, acid pre-treatment plus sulfur solution and RF Ar plasma cleaning had been used on GaAs (100) substrate. The PL intensities after three types of processing increased by 30%, 42% and 33% respectively. With three methods used for laser process, we found that, in addition to acid pre-treatment, the COD threshold of lasers processed by other two methods have been improved greatly.","PeriodicalId":129625,"journal":{"name":"2012 International Conference on Optoelectronics and Microelectronics","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Facet passivation of GaAs semiconductor lasers using chemical and plasma methods\",\"authors\":\"Lu Zhou, Yunhua Wang, Baoshan Jia, Duanyuan Bai, Xin Gao, B. Bo, Z. Qiao\",\"doi\":\"10.1109/ICOOM.2012.6316213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To remove the cavity surface contamination of semiconductor lasers and improve their COD threshold, the novel sulfur solution, acid pre-treatment plus sulfur solution and RF Ar plasma cleaning had been used on GaAs (100) substrate. The PL intensities after three types of processing increased by 30%, 42% and 33% respectively. With three methods used for laser process, we found that, in addition to acid pre-treatment, the COD threshold of lasers processed by other two methods have been improved greatly.\",\"PeriodicalId\":129625,\"journal\":{\"name\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Optoelectronics and Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICOOM.2012.6316213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Optoelectronics and Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICOOM.2012.6316213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Facet passivation of GaAs semiconductor lasers using chemical and plasma methods
To remove the cavity surface contamination of semiconductor lasers and improve their COD threshold, the novel sulfur solution, acid pre-treatment plus sulfur solution and RF Ar plasma cleaning had been used on GaAs (100) substrate. The PL intensities after three types of processing increased by 30%, 42% and 33% respectively. With three methods used for laser process, we found that, in addition to acid pre-treatment, the COD threshold of lasers processed by other two methods have been improved greatly.
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