K. Mori, S. Shinjo, F. Kitabayashi, A. Ohta, Y. Ikeda, O. Ishida
{"title":"一种l波段高效低失真功率放大模块,采用HPF/LPF级间匹配组合电路","authors":"K. Mori, S. Shinjo, F. Kitabayashi, A. Ohta, Y. Ikeda, O. Ishida","doi":"10.1109/MWSYM.2000.863317","DOIUrl":null,"url":null,"abstract":"A three stage high power amplifier (HPA) module for wide-band CDMA handy phones using an HPF/LPF combined interstage matching circuit has been developed. An HPF/LPF combined interstage matching circuit can realize both the optimum load impedance of the second stage FET and the optimum source impedance of the third stage FET to achieve high efficiency. The developed three stage HPA module, size of which is 0.08cc (7 mm/spl times/7 mm./spl times/1.7 mm), achieves a power-added efficiency of 43.9% and an output power of 27.1 dBm with an adjacent channel leakage power (ACP) of -38 dBc at 1.95 GHz.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"An L-band high efficiency and low distortion power amplifier module using an HPF/LPF combined interstage matching circuit\",\"authors\":\"K. Mori, S. Shinjo, F. Kitabayashi, A. Ohta, Y. Ikeda, O. Ishida\",\"doi\":\"10.1109/MWSYM.2000.863317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three stage high power amplifier (HPA) module for wide-band CDMA handy phones using an HPF/LPF combined interstage matching circuit has been developed. An HPF/LPF combined interstage matching circuit can realize both the optimum load impedance of the second stage FET and the optimum source impedance of the third stage FET to achieve high efficiency. The developed three stage HPA module, size of which is 0.08cc (7 mm/spl times/7 mm./spl times/1.7 mm), achieves a power-added efficiency of 43.9% and an output power of 27.1 dBm with an adjacent channel leakage power (ACP) of -38 dBc at 1.95 GHz.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.863317\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.863317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An L-band high efficiency and low distortion power amplifier module using an HPF/LPF combined interstage matching circuit
A three stage high power amplifier (HPA) module for wide-band CDMA handy phones using an HPF/LPF combined interstage matching circuit has been developed. An HPF/LPF combined interstage matching circuit can realize both the optimum load impedance of the second stage FET and the optimum source impedance of the third stage FET to achieve high efficiency. The developed three stage HPA module, size of which is 0.08cc (7 mm/spl times/7 mm./spl times/1.7 mm), achieves a power-added efficiency of 43.9% and an output power of 27.1 dBm with an adjacent channel leakage power (ACP) of -38 dBc at 1.95 GHz.