采用HfO2栅极介质的n沟道隧道场效应晶体管的PBTI特性:新见解和物理模型

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210114

G. Han, Yue Yang, P. Guo, Chunlei Zhan, Kain Lu Low, K. Goh, B. Liu, E. Toh, Y. Yeo

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引用次数: 8

摘要

本文报道了在同一晶片上制造相同高k/金属栅极堆的nTFET和nMOSFET的BTI特性的首次比较研究。在相同的PBTI应力下，与nMOSFET相比，ntfet表现出更小的ΔVTH和Gm损耗。我们推测，隧道结(TJ)上方的HfO2栅极介电介质中的捕获电子密度低于通道上方的捕获电子密度，这导致了nTFET中优异的PBTI特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PBTI characteristics of N-channel tunneling field effect transistor with HfO2 gate dielectric: New insights and physical model

We report the first comparison study of BTI characteristics of nTFET and nMOSFET with the same high-k/metal gate stack fabricated on the same wafer. NTFETs demonstrate smaller ΔVTH and Gm loss in comparison with the nMOSFET under the same PBTI stress. We speculate that the trapped electrons density in HfO2 gate dielectric above the tunnel junction (TJ) is lower than that above the channel, which leads to the superior PBTI characteristics in nTFET.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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