{"title":"超薄Si/SiO/ sub2 /结构的辐照效应","authors":"J. Cantin, H. J. von Bardeleben, J. Autran","doi":"10.1109/RADECS.1997.698859","DOIUrl":null,"url":null,"abstract":"The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Irradiation effects in ultrathin Si/SiO/sub 2/ structures\",\"authors\":\"J. Cantin, H. J. von Bardeleben, J. Autran\",\"doi\":\"10.1109/RADECS.1997.698859\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.\",\"PeriodicalId\":106774,\"journal\":{\"name\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1997.698859\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1997.698859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Irradiation effects in ultrathin Si/SiO/sub 2/ structures
The total dose response of Si/SiO/sub 2/ structures with ultrathin (20-40 /spl Aring/) thermal oxide layers grown on porous silicon substrates has been studied by Electron Paramagnetic Resonance (EPR) spectroscopy. The modification of the interface defect passivation and the generation of oxide defects have been analysed as a function of dose for three series of samples with different initial hydrogen passivation states.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
