通过共面传输线阻抗测量观察衬底特性

L. Floyd, J. Pike, Jing Tao, N. Jackson
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引用次数: 1

摘要

在开发用于毫米波应用(即太赫兹混频器和乘频器)的GaAs肖特基二极管膜技术的过程中,发现膜结构的细微变化和变化会显著影响电路的性能。我们描述了这些效应是如何表现出来的,并使用在各种衬底上的s参数测量,展示了如何用通过共面传输线阻抗测量可观察到的导电层或电荷层来解释它们。给出了一种改进的传输线模型。
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Observations on substrate characterisation through Coplanar Transmission Line Impedance measurements
In the course of developing a GaAs Schottky diode membrane technology for millimeter wave applications (viz. THz mixers and multipliers) it was found that subtle changes and variations introduced into the membrane structure can significantly affect the circuit performance. We describe how these effects manifest themselves and, using S-parameter measurements on a variety of substrates, show how they can be explained in terms of conductive or charge layers that are observable through Coplanar Transmission Line Impedance measurements. A modified transmission line model is given.
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