{"title":"具有12.1 dB增益和5.456 dB NF的低噪声放大器，适用于GaAs 0.15μm pHEMT工艺的v波段应用","authors":"Chih-Chen Chang, Yen-Chung Chiang","doi":"10.1109/RFIT.2012.6401599","DOIUrl":null,"url":null,"abstract":"In this paper, a two-stage low-noise amplifier (LNA) designed for V-band applications is presented. Both stages are the common source-common gate (CS-CG) cascoded topologies with inductive degeneration structure for minimizing the noise figure (NF). This proposed LNA is implemented in a GaAs 0.15μm pHEMT process technology, which achieves a peak gain of 12.1 dB, a NF of 5.456 dB, and an input P1dB of -20 dBm at the 56.8 GHz frequency. The 3dB bandwidth is from 54.9 GHz to 58 GHz. The power consumption of the proposed LNA is 26.6 mW from the 1.8V voltage supply.","PeriodicalId":187550,"journal":{"name":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process\",\"authors\":\"Chih-Chen Chang, Yen-Chung Chiang\",\"doi\":\"10.1109/RFIT.2012.6401599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a two-stage low-noise amplifier (LNA) designed for V-band applications is presented. Both stages are the common source-common gate (CS-CG) cascoded topologies with inductive degeneration structure for minimizing the noise figure (NF). This proposed LNA is implemented in a GaAs 0.15μm pHEMT process technology, which achieves a peak gain of 12.1 dB, a NF of 5.456 dB, and an input P1dB of -20 dBm at the 56.8 GHz frequency. The 3dB bandwidth is from 54.9 GHz to 58 GHz. The power consumption of the proposed LNA is 26.6 mW from the 1.8V voltage supply.\",\"PeriodicalId\":187550,\"journal\":{\"name\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2012.6401599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2012.6401599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-noise amplifier with 12.1 dB gain and 5.456 dB NF for V-band applications in GaAs 0.15μm pHEMT process
In this paper, a two-stage low-noise amplifier (LNA) designed for V-band applications is presented. Both stages are the common source-common gate (CS-CG) cascoded topologies with inductive degeneration structure for minimizing the noise figure (NF). This proposed LNA is implemented in a GaAs 0.15μm pHEMT process technology, which achieves a peak gain of 12.1 dB, a NF of 5.456 dB, and an input P1dB of -20 dBm at the 56.8 GHz frequency. The 3dB bandwidth is from 54.9 GHz to 58 GHz. The power consumption of the proposed LNA is 26.6 mW from the 1.8V voltage supply.
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