Tae Geun Kim, E. Kim, C. Son, Seong-Il Kim, Jichai Jeong, S. Min, Si-Jong Leem, Jong Il Jun, H. Lee, J. Park, T. Seong, S. Jun
{"title":"具有有效p-n结阻流层的GaAs/AlGaAs量子线激光器及其阵列的激光特性","authors":"Tae Geun Kim, E. Kim, C. Son, Seong-Il Kim, Jichai Jeong, S. Min, Si-Jong Leem, Jong Il Jun, H. Lee, J. Park, T. Seong, S. Jun","doi":"10.1109/LEOS.1996.565265","DOIUrl":null,"url":null,"abstract":"We report quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers, instead of proton implantation. A n-GaAs buffer and a 2-/spl mu/m-thick p-GaAs QW layer for current blocking were grown on (100) GaAs substrates. Structure and optical properties of the QWR have been investigated using transmission electron microscopy (TEM) and low temperature photoluminescence (PL).","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer\",\"authors\":\"Tae Geun Kim, E. Kim, C. Son, Seong-Il Kim, Jichai Jeong, S. Min, Si-Jong Leem, Jong Il Jun, H. Lee, J. Park, T. Seong, S. Jun\",\"doi\":\"10.1109/LEOS.1996.565265\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers, instead of proton implantation. A n-GaAs buffer and a 2-/spl mu/m-thick p-GaAs QW layer for current blocking were grown on (100) GaAs substrates. Structure and optical properties of the QWR have been investigated using transmission electron microscopy (TEM) and low temperature photoluminescence (PL).\",\"PeriodicalId\":332726,\"journal\":{\"name\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1996.565265\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.565265","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Lasing characteristics of GaAs/AlGaAs quantum wire laser and its array with an effective p-n junction current blocking layer
We report quantum wire (QWR) diode lasers incorporating a p-n junction blocking layer between buffer layers, instead of proton implantation. A n-GaAs buffer and a 2-/spl mu/m-thick p-GaAs QW layer for current blocking were grown on (100) GaAs substrates. Structure and optical properties of the QWR have been investigated using transmission electron microscopy (TEM) and low temperature photoluminescence (PL).