适于辐射检测的多晶金刚石薄膜的初步研究

2009 3rd International Workshop on Advances in sensors and Interfaces Pub Date : 2009-06-25 DOI:10.1109/IWASI.2009.5184770

P. Acquafredda, E. Bisceglie, D. Bottalico, R. Brescia, M. Brigida, G. Caliandro, M. Capitelli, G. Casamassima, T. Cassano, R. Celiberto, G. Cicala, V. Crismale, A. De Giacomo, O. De Pascale, C. Favuzzi, G. Ferraro, P. Fusco, F. Gargano, N. Giglietto, F. Giordano, C. Gorse, V. Laporta, S. Longo, F. Loparco, B. Marangelli, M. Mazziotta, N. Mirizzi, M. Muscarella, M. Nitti, A. Rainò, A. Romeo, G. Senesi, P. Spinelli, A. Valentini, G. Verrone

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引用次数: 0

摘要

采用微波等离子体增强化学气相沉积技术，从高度稀释(H2中CH4为1%)的混合气体开始，在p掺杂Si(100)衬底上生长多晶金刚石薄膜。共面交叉指状Cr/Au触点在两个约8µm厚、晶粒尺寸不同的样品上进行了热蒸发。暗电流-电压(I-V)测量和阻抗表征已被发现依赖于晶粒尺寸和检测样品的质量。

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Preliminary study on polycrystalline diamond films suitable for radiation detection

The microwave plasma enhanced chemical vapor deposition technique has been employed to grow polycrystalline diamond films on p-doped Si (100) substrates starting from highly diluted (1% CH4 in H2) gas mixtures. Coplanar interdigitated Cr/Au contacts have been thermally evaporated on two samples about 8 µm thick having different grain size. Dark current-voltage (I–V) measurements and impedance characterization have been found to be dependent on the grain size and on the quality of the examined samples.

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2009 3rd International Workshop on Advances in sensors and Interfaces

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