{"title":"LOCOS-和沟槽隔离mosfet热载子光发射的二维分析","authors":"T. Ohzone, H. Iwata, Y. Uraoka, S. Odanaka","doi":"10.1109/IEDM.1992.307416","DOIUrl":null,"url":null,"abstract":"A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs\",\"authors\":\"T. Ohzone, H. Iwata, Y. Uraoka, S. Odanaka\",\"doi\":\"10.1109/IEDM.1992.307416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-11-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs
A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<>
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