{"title":"集成AlGaAs/GaAs HBT高速运算放大器","authors":"Dong Yi, Zeng Qingming, Cai Keli, Zhang Keqiang","doi":"10.1109/GAAS.1994.636991","DOIUrl":null,"url":null,"abstract":"We report the fabrication and testing of a wideband and high slew-rate voltage-mode operational amplifier using AlGaAs/GaAs HBTs. The fabrication process showed that a higher carbon doping concentration is more effective to reducing base resistance and gives a good steadiness of process. The specific contact resistivity of base measured by TLM was 6.4/spl times/10/sup -7/ /spl Omega/.cm/sup 2/ at the base doping concentration 4/spl times/10/sup 19/ cm/sup 3/ by using a AuZu/Au alloy. The HBT operational amplifier has provided 500 v//spl mu/s high slew-rate, only 8 ns settling time and about 2 GHz unity-gain frequency. The circuit structure gave CMRR values in the order of 70 dB.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integrated AlGaAs/GaAs HBT high speed operational amplifier\",\"authors\":\"Dong Yi, Zeng Qingming, Cai Keli, Zhang Keqiang\",\"doi\":\"10.1109/GAAS.1994.636991\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the fabrication and testing of a wideband and high slew-rate voltage-mode operational amplifier using AlGaAs/GaAs HBTs. The fabrication process showed that a higher carbon doping concentration is more effective to reducing base resistance and gives a good steadiness of process. The specific contact resistivity of base measured by TLM was 6.4/spl times/10/sup -7/ /spl Omega/.cm/sup 2/ at the base doping concentration 4/spl times/10/sup 19/ cm/sup 3/ by using a AuZu/Au alloy. The HBT operational amplifier has provided 500 v//spl mu/s high slew-rate, only 8 ns settling time and about 2 GHz unity-gain frequency. The circuit structure gave CMRR values in the order of 70 dB.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636991\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated AlGaAs/GaAs HBT high speed operational amplifier
We report the fabrication and testing of a wideband and high slew-rate voltage-mode operational amplifier using AlGaAs/GaAs HBTs. The fabrication process showed that a higher carbon doping concentration is more effective to reducing base resistance and gives a good steadiness of process. The specific contact resistivity of base measured by TLM was 6.4/spl times/10/sup -7/ /spl Omega/.cm/sup 2/ at the base doping concentration 4/spl times/10/sup 19/ cm/sup 3/ by using a AuZu/Au alloy. The HBT operational amplifier has provided 500 v//spl mu/s high slew-rate, only 8 ns settling time and about 2 GHz unity-gain frequency. The circuit structure gave CMRR values in the order of 70 dB.
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