一种用于低于250 mV电源电压的三极管补偿CMOS带隙磁芯

2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Pub Date : 2022-06-12 DOI:10.1109/prime55000.2022.9816756

Francesco Gagliardi, Andrea Ria, G. Manfredini, M. Piotto, P. Bruschi

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引用次数: 1

摘要

本文提出了一种简单而新颖的CMOS，亚阈值带隙电压基准，能够在极低的电源电压值下工作。通过在采用标准0.18 $\mu$m CMOS工艺设计的原型上进行精确的电模拟，证明了该电路的性能。参考电压为190 mV，最小电源电压仅为223 mV，线路稳压接近8 mV/V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Triode-Compensated CMOS Bandgap Core for Sub-250 mV Supply Voltages

This paper presents a simple and original CMOS, sub-threshold bandgap voltage reference capable of operating with extremely reduced supply voltage values. The circuit capability is demonstrated by means of accurate electrical simulations performed on a prototype designed with a standard 0.18 $\mu$m CMOS process. A reference voltage of 190 mV has been obtained with a minimum supply voltage of only 223 mV and a line regulation close to 8 mV/V.

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2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

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