{"title":"“TOP-PECVD”:一种新的共形等离子体增强CVD技术，使用TEOS，臭氧和脉冲调制射频等离子体","authors":"Y. Ikeda, K. Kishimoto, K. Hirose, Y. Numasawa","doi":"10.1109/IEDM.1992.307362","DOIUrl":null,"url":null,"abstract":"A new CVD technology is proposed to form a conformal SiO/sub 2/ film with superior film quality. This technology is named Tetraethylorthosilicate (TEOS) Ozone Pulse-wave Plasma Enhanced Chemical Vapor Deposition (TOP-PECVD). In the TOP-PECVD technology, TEOS-O/sub 3/ thermal film deposition and O/sub 2/+O/sub 3/ plasma film modification processes are alternately repeated in the same reaction chamber to obtain a thick and homogeneous film. The TOP-PECVD film has high conformality (Side/Top) of over 90%, which is much larger than that for a conventional TEOS-PECVD film (41%). On the other hand, it has less moisture content and smaller leakage current as compared to the conventional TEOS-PECVD film. Carbon content, measured by SIMS, is one hundredth times less than that in the TEOS-PECVD film. Delineation etching patterns show that the TOP-PECVD film has a good homogeneous quality.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"\\\"TOP-PECVD\\\": a new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma\",\"authors\":\"Y. Ikeda, K. Kishimoto, K. Hirose, Y. Numasawa\",\"doi\":\"10.1109/IEDM.1992.307362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new CVD technology is proposed to form a conformal SiO/sub 2/ film with superior film quality. This technology is named Tetraethylorthosilicate (TEOS) Ozone Pulse-wave Plasma Enhanced Chemical Vapor Deposition (TOP-PECVD). In the TOP-PECVD technology, TEOS-O/sub 3/ thermal film deposition and O/sub 2/+O/sub 3/ plasma film modification processes are alternately repeated in the same reaction chamber to obtain a thick and homogeneous film. The TOP-PECVD film has high conformality (Side/Top) of over 90%, which is much larger than that for a conventional TEOS-PECVD film (41%). On the other hand, it has less moisture content and smaller leakage current as compared to the conventional TEOS-PECVD film. Carbon content, measured by SIMS, is one hundredth times less than that in the TEOS-PECVD film. Delineation etching patterns show that the TOP-PECVD film has a good homogeneous quality.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
"TOP-PECVD": a new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma
A new CVD technology is proposed to form a conformal SiO/sub 2/ film with superior film quality. This technology is named Tetraethylorthosilicate (TEOS) Ozone Pulse-wave Plasma Enhanced Chemical Vapor Deposition (TOP-PECVD). In the TOP-PECVD technology, TEOS-O/sub 3/ thermal film deposition and O/sub 2/+O/sub 3/ plasma film modification processes are alternately repeated in the same reaction chamber to obtain a thick and homogeneous film. The TOP-PECVD film has high conformality (Side/Top) of over 90%, which is much larger than that for a conventional TEOS-PECVD film (41%). On the other hand, it has less moisture content and smaller leakage current as compared to the conventional TEOS-PECVD film. Carbon content, measured by SIMS, is one hundredth times less than that in the TEOS-PECVD film. Delineation etching patterns show that the TOP-PECVD film has a good homogeneous quality.<>
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