{"title":"非均匀展宽和注入能级对量子点半导体光放大器增益恢复的影响","authors":"J. Xiao, Yongzhen Huang, Yuede Yang","doi":"10.1109/INOW.2008.4634478","DOIUrl":null,"url":null,"abstract":"Numerical simulation of rate equations for QD SOAs under the injection of double sub-picosecond optical pulses shows that gain recovery has two fast time constants corresponding to carrier relaxations to ground and excited states.","PeriodicalId":112256,"journal":{"name":"2008 International Nano-Optoelectronics Workshop","volume":"202 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effect of inhomogeneous broadening and injection level on gain recovery of quantum dot semiconductor optical amplifiers\",\"authors\":\"J. Xiao, Yongzhen Huang, Yuede Yang\",\"doi\":\"10.1109/INOW.2008.4634478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Numerical simulation of rate equations for QD SOAs under the injection of double sub-picosecond optical pulses shows that gain recovery has two fast time constants corresponding to carrier relaxations to ground and excited states.\",\"PeriodicalId\":112256,\"journal\":{\"name\":\"2008 International Nano-Optoelectronics Workshop\",\"volume\":\"202 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Nano-Optoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INOW.2008.4634478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Nano-Optoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INOW.2008.4634478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of inhomogeneous broadening and injection level on gain recovery of quantum dot semiconductor optical amplifiers
Numerical simulation of rate equations for QD SOAs under the injection of double sub-picosecond optical pulses shows that gain recovery has two fast time constants corresponding to carrier relaxations to ground and excited states.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
