消息恢复:电隔离IGBT栅极驱动器的鲁棒故障检测和报告方法

I. Hurez, Ted Y. G. Chen, F. Vlădoianu, V. Anghel, G. Brezeanu
{"title":"消息恢复:电隔离IGBT栅极驱动器的鲁棒故障检测和报告方法","authors":"I. Hurez, Ted Y. G. Chen, F. Vlădoianu, V. Anghel, G. Brezeanu","doi":"10.1109/SMICND.2018.8539764","DOIUrl":null,"url":null,"abstract":"This paper presents a fault detection and reporting technique for galvanically isolated Insulated Gate Bipolar Transistor (IGBT) gate drivers. This technique provides robust transmission of Under Voltage Lock Out (UVLO) and Desaturation (DESAT) events. The proposed method was verified by means of simulations and implemented in a standard 0.25µm CMOS BCD technology, as part of a galvanically isolated IGBT gate driver. Experimental results highlight proper reporting of UVLO and DESAT faults.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Message Recovered: A Robust Fault Detection and Reporting Method for Galvanically Isolated IGBT Gate Drivers\",\"authors\":\"I. Hurez, Ted Y. G. Chen, F. Vlădoianu, V. Anghel, G. Brezeanu\",\"doi\":\"10.1109/SMICND.2018.8539764\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a fault detection and reporting technique for galvanically isolated Insulated Gate Bipolar Transistor (IGBT) gate drivers. This technique provides robust transmission of Under Voltage Lock Out (UVLO) and Desaturation (DESAT) events. The proposed method was verified by means of simulations and implemented in a standard 0.25µm CMOS BCD technology, as part of a galvanically isolated IGBT gate driver. Experimental results highlight proper reporting of UVLO and DESAT faults.\",\"PeriodicalId\":247062,\"journal\":{\"name\":\"2018 International Semiconductor Conference (CAS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2018.8539764\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2018.8539764","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

提出了一种用于电隔离绝缘栅双极晶体管(IGBT)栅极驱动器的故障检测与报告技术。该技术提供了电压下锁定(UVLO)和去饱和(DESAT)事件的鲁棒传输。通过仿真验证了所提出的方法,并在标准的0.25µm CMOS BCD技术中实现,作为电隔离IGBT栅极驱动器的一部分。实验结果强调了UVLO和DESAT故障的正确报告。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Message Recovered: A Robust Fault Detection and Reporting Method for Galvanically Isolated IGBT Gate Drivers
This paper presents a fault detection and reporting technique for galvanically isolated Insulated Gate Bipolar Transistor (IGBT) gate drivers. This technique provides robust transmission of Under Voltage Lock Out (UVLO) and Desaturation (DESAT) events. The proposed method was verified by means of simulations and implemented in a standard 0.25µm CMOS BCD technology, as part of a galvanically isolated IGBT gate driver. Experimental results highlight proper reporting of UVLO and DESAT faults.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of the Deposition Conditions on Titanium Oxide Thin Films Properties Semiconductor Devices and Microsystems (Poster Session) TiO2 - Graphene Oxide Thin Films Obtained by Spray Pyrolysis Deposition LDO with a Dual Complementary Buffer Architecture GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1