AlGaN/GaN mishemt阈值电压的正移位抑制

2019 8th International Symposium on Next Generation Electronics (ISNE) Pub Date : 2019-10-01 DOI:10.1109/ISNE.2019.8896561

Meihua Liu, Kuan‐Chang Chang, Xinnan Lin, Lei Li, Yufeng Jin

{"title":"AlGaN/GaN mishemt阈值电压的正移位抑制","authors":"Meihua Liu, Kuan‐Chang Chang, Xinnan Lin, Lei Li, Yufeng Jin","doi":"10.1109/ISNE.2019.8896561","DOIUrl":null,"url":null,"abstract":"In this paper, we reported a supercritical treatment technology to suppress the positive shift in threshold voltage. After treatment, threshold voltage shift ($\\triangle$ Vth) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced from 10-9mA/mm to 10-11mA/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":"262 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs\",\"authors\":\"Meihua Liu, Kuan‐Chang Chang, Xinnan Lin, Lei Li, Yufeng Jin\",\"doi\":\"10.1109/ISNE.2019.8896561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we reported a supercritical treatment technology to suppress the positive shift in threshold voltage. After treatment, threshold voltage shift ($\\\\triangle$ Vth) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced from 10-9mA/mm to 10-11mA/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.\",\"PeriodicalId\":405565,\"journal\":{\"name\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"volume\":\"262 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2019.8896561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们报道了一种超临界处理技术来抑制阈值电压的正偏移。处理后，正栅极偏置应力下的阈值电压位移($\triangle$ Vth)从4.05V减小到0.15V，栅极漏电流从10-9mA/mm减小到10-11mA/mm。氮离子可以修饰界面态陷阱，使其具有广泛的陷阱分布，从而抑制栅漏电流和阈值电压漂移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs

In this paper, we reported a supercritical treatment technology to suppress the positive shift in threshold voltage. After treatment, threshold voltage shift ($\triangle$ Vth) under forward gate bias stress decreased from 4.05V to 0.15V, gate leakage current was reduced from 10-9mA/mm to 10-11mA/mm. It was suggested that nitrogen ions could modify interface state traps with a broad distribution of trapping, leading to suppressed gate leakage current and threshold voltage drifts.

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2019 8th International Symposium on Next Generation Electronics (ISNE)

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