T. Nitta, T. Minato, M. Yano, A. Uenisi, M. Harada, S. Hine
{"title":"250v超级沟功率MOSFET (STM)的实验结果及仿真分析","authors":"T. Nitta, T. Minato, M. Yano, A. Uenisi, M. Harada, S. Hine","doi":"10.1109/ISPSD.2000.856777","DOIUrl":null,"url":null,"abstract":"We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional n-drift layer, STM has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250 V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron, sp to 5 m/spl Omega/cm/sup 2/ for a breakdown voltage of 300 V.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"235 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"51","resultStr":"{\"title\":\"Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)\",\"authors\":\"T. Nitta, T. Minato, M. Yano, A. Uenisi, M. Harada, S. Hine\",\"doi\":\"10.1109/ISPSD.2000.856777\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional n-drift layer, STM has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250 V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron, sp to 5 m/spl Omega/cm/sup 2/ for a breakdown voltage of 300 V.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"235 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"51\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856777\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)
We propose a new structure of power MOSFET, i.e. Super Trench power MOSFET (STM). Instead of a conventional n-drift layer, STM has vertical P and N layers formed within mesa regions between adjacent trenches filled with insulator. The P and N stripe structure relaxes the electric field in off-state and makes possible a lower specific on-resistance (Ron, sp) than that of the conventional MOSFET. We fabricated a 250 V STM for the first time with only one additional mask over the conventional DMOS process, and the measured data show high breakdown voltage with highly doped n drift layer. The device simulation results show it should be possible to lower the Ron, sp to 5 m/spl Omega/cm/sup 2/ for a breakdown voltage of 300 V.