用于5G通信的27.5-43.5 GHz高线性上转换CMOS混频器

Zhilin Chen, Zhiqing Liu, Zhengdong Jiang, P. Liu, Huihua Liu, Yunqiu Wu, Chenxi Zhao, K. Kang
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引用次数: 12

摘要

采用标准65nm CMOS工艺,设计并制作了一款适用于5G通信的27.5-43.5 GHz高线性上转换混频器。混频器包括一个双平衡吉尔伯特单元和一个线性化的跨导级,用于提高混频器的线性度。此外,基于耦合谐振器,输入输出平衡器实现了宽带阻抗匹配。在9.7 ~ 17.8 GHz频率范围内,中频口的输入反射系数小于−10 dB;在34.3 ~ 47.7 GHz频率范围内,射频口的输入反射系数小于−10 dB。在27.5 ~ 43.5 GHz范围内,转换增益为−5db ~−8db。中频口漏电小于- 43 dB,射频口漏电小于- 40 dB。混频器在38 GHz时实现高达0.42 dBm的输出1 dB压缩点,同时从1V电源消耗14 mW。
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A 27.5–43.5 GHz high linearity up-conversion CMOS mixer for 5G communication
A 27.5–43.5 GHz high linearity up-conversion mixer for 5G communication is designed and fabricated by standard 65 nm CMOS process. The mixer consists of a double balanced Gilbert cell and a linearized transconductance stage which is used to enhance the mixer linearity. In addition, based on the coupled resonators, the input and output baluns implement wide-band impedance matching. The mixer achieves IF-port input reflection coefficient less than −10 dB for frequency 9.7–17.8 GHz, and RF-port input reflection coefficient less than −10 dB for frequency 34.3 to 47.7 GHz. The conversion gain is −5 dB to −8 dB within 27.5–43.5 GHz. LO leakage to the IF port and RF port is less than −43 dB and −40 dB, respectively. The mixer realizes an output 1 dB compression point as high as 0.42 dBm at 38 GHz, while consuming 14 mW from a 1V supply.
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