CMOS小型化微波集成电路中带假填充的合成准tem传输线

Chao-Wei Wang, Hsien-Shun Wu, Ching-Kuang C. Tzuang
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引用次数: 3

摘要

本文报道了一种在标准CMOS 0.13µm 1P8M工艺中具有假填充的片上合成传输线(TL)。合成的互补导电带传输线(CCS TL)由单线和网状地平面组成。假金属在信号线下面。实测结果表明,在不降低质量因子(q因子)的情况下,添加虚拟填充的CCS TL可以合成35 Ω ~ 70 Ω范围内的特性阻抗。结合该TL的k波段CMOS放大器的原型演示了其小型化,并证实了对电气性能的忽略影响。
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Synthetic quasi-TEM transmission lines with dummy fills for CMOS miniaturized microwave integrated circuit
This paper reports an on-chip synthetic transmission line (TL) with dummy fills in the standard CMOS 0.13 µm 1P8M process. The synthetic TL so-called the complementary conducting strip transmission line (CCS TL) consists of a single trace and a mesh ground plane. The dummy metals are beneath the signal trace. The measured results show the CCS TL with the dummy fills can synthesize the characteristic impedance from 35 Ω to 70 Ω without degrading the quality-factor (Q-factor). A prototype of the K-band CMOS amplifier incorporating this TL demonstrates its miniaturization, and confirms the neglected impacts on the electrical performances.
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