采用米勒电容增强技术和相位降噪技术实现LC压控振荡器

Lianming Li, P. Reynaert, M. Steyaert
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引用次数: 21

摘要

采用米勒电容增强和相位降噪技术,在90nm CMOS上实现了60ghz Colpitts LC压控振荡器。使用米勒电容,调谐输入调谐输出振荡器和传统的科尔皮茨振荡器结合在一起,从而解决了其启动问题并改善了相位噪声性能。此外,还发现该振荡器对储罐失谐具有较强的鲁棒性。该振荡器在57.6 GHz的1 MHz偏置时相位噪声为- 102 dBc/Hz,从0.6 V的电源消耗7.2 mW。调谐范围为55.8 GHz ~ 61.1 GHz,测量到的单端输出功率约为−7 dBm。因此,优选值分别为FOM−189和FOM−188。
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A colpitts LC VCO with Miller-capacitance gm enhancing and phase noise reduction techniques
A 60 GHz Colpitts LC VCO with Miller-capacitance gm enhancing and phase noise reduction techniques is realized in 90 nm CMOS. With the Miller capacitance, the tuned-input tuned-output oscillator and the conventional Colpitts oscillator are combined together, thereby solving its start-up issues and improving phase noise performance. Moreover, it is found that the oscillator is robust to the tank mistuning. The proposed oscillator achieves a phase noise of −102 dBc/Hz at 1 MHz offset from 57.6 GHz, consuming 7.2 mW from a power supply of 0.6 V. The tuning range is from 55.8 GHz to 61.1 GHz and the measured single-ended output power is about −7 dBm. Accordingly, the figures-of-merit are FOM −189 and FOMT −188 respectively.
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