碳纳米管场发射极和背门控结构

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354917

M. Zhu, J.J. Wang, R. Outlaw, X. Zhao, B. Holloway, D. Manos, V. Mammana, M. Ray, O. Shenderova

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引用次数: 0

摘要

采用射频(RF)等离子体增强化学气相沉积(PECVD)方法，以纳米级镍颗粒为催化剂，通过纳米球光刻(NSL)法和等离子体预处理硅衬底上的镍层制备了碳纳米管(CNTs)。研究了这些碳纳米管作为场发射材料，采用一种新型三极管结构，通过背门控结构设计场发射器件。利用三极管I-V曲线测量方法对该背控器件的场发射特性进行了表征。

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Carbon nanotubes field emitter and back-gated structure

Carbon nanotubes (CNTs) were synthesized by radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) method on nanoscaled nickel particles as catalyst formed by both a nanosphere lithography (NSL) method and by a plasma pre-treatment of Ni layers on silicon substrates. These CNTs was studied as field emission materials using a novel triode structure for field emission device design by a back-gated structure. Field emission of this back-gated device was characterized using a triode I-V curve measurement.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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