不同互连技术下银烧结功率半导体热机械性能的有限元分析和功率循环试验

R. Dudek, R. Döring, A. Otto, S. Rzepka, S. Stegmeier, S. Kiefl, A. Lunding, R. Eisele
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引用次数: 3

摘要

本文报道了功率半导体的热机械性能分析。采用电-热-机全耦合有限元分析方法,模拟了电力循环载荷的瞬态温度载荷和机械应力。功率循环试验与理论研究并行进行。对试验观察到的破坏模式进行了分析,并与有限元结果进行了调整。一些破坏需要一个复杂的评估策略,因为破坏开始于双材料自由边缘,服从机械应力奇点。采用粘聚区法(CZM)进行损伤力学建模,并结合耦合有限元分析(FEA)。介绍了该方法在中等功率下的SiC Mosfet测试样品和高功率下具有绝缘栅双极晶体管(igbt)和二极管的高压逆变模块中的应用。这两个模块都在直接结合铜(DBC)衬底上使用银烧结技术。对于Mosfet测试样品,顶部互连采用线键连接,而对于逆变器则采用基于电镀的平面技术。考虑到电热结果,计算出平面铜互连的堆叠比线键版本要好15-30%,这取决于布局和有关热性能的电流。对于模具键,DCB铜层和银层中的裂纹网络取代了软焊模具中主要的蠕变棘轮机制。这种破坏模式可归因于高循环面内法向应力导致高功率循环数下的亚临界裂纹扩展。用CZM研究了重型铝丝的失效模式。采用CZM方法对平面金属化分层进行了评价。对于后者,进行了参数化研究,以优化材料的选择和金属化布置。
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FE analyses and power cycling tests on the thermo-mechanical performance of silver sintered power semiconductors with different interconnection technologies
The paper reports on thermo-mechanical performance analyses of power semiconductors. Realistic transient temperature loadings as well as mechanical stresses were simulated by fully coupled electro-thermal-mechanical finite element analyses for power cycling loads. Power cycling tests were run in parallel to the theoretical investigations. The failure modes observed by testing were analyzed and adjusted to FE results. Some of the failures need a sophisticated evaluation strategy, as failure initiates at bi-material free edges, which obey a mechanical stress singularity. Damage mechanical modelling by means of the cohesive zone method (CZM) was adopted along with the coupled finite element analysis (FEA) in those cases. Applications of the methodology are presented for a SiC Mosfet testing sample operating at medium power and a high voltage inverter module with insulated gate bipolar transistors (IGBTs) and diodes, operating at high power. Both modules use silver sintering technology on directly bonded copper (DBC) substrates. Top interconnects are made by wire bonding for the Mosfet test sample but by an electroplating based planar technology for the inverter. Considering electro-thermal results it was calculated that stacks with planar copper interconnects outperform the wire bonded versions by 15–30% dependent on layout and current concerning thermal performance. For the die bonds, networks of cracks in the DCB copper and the silver layer replace the creep-ratchetting mechanism dominant for soft-soldered dies. This failure mode could be attributed to high cyclic in-plane normal stresses leading to subcritical crack growth at high power cycle numbers. The failure mode wire bond lift-off, characteristic for heavy Al wires, was investigated by CZM. The CZM methodology was also adopted to evaluate planar metallization delamination. For the latter, a parametric study has been made to optimize the materials choice and the layout of the metallization.
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