纳米横条静电放电保护设计

Jian Liu, Lijie Zhang, Xin Wang, Lin Lin, Zitao Shi, Albert Z. H. Wang, Ru Huang, Gary Zhang, Shi-Jie Wen, R. Wong
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引用次数: 1

摘要

本文报道了基于纳米交叉棒的新型纳米相开关静电放电保护结构的设计和分析。测量结果证实,ESD保护具有100pS的快速响应,超低泄漏illeak ~ 0.11pA,可变触发电压(Vt1)和良好的ESD保护电压比(ESDV)>230V/µm2。这种非传统的纳米交叉棒ESD保护可以成为射频和混合信号集成电路的潜在解决方案。
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Nano crossbar electrostatic discharge protection design
We report design and analysis of new nano crossbar based nano phase switching electrostatic discharge (ESD) protection structures. Measurements confirm ESD protection featuring fast response of 100pS, ultra low leakage Ileak∼0.11pA, varying trigger voltage (Vt1) and good ESD protection voltage ratio (ESDV)>230V/µm2. This non-traditional nano-crossbar ESD protection can be a potential solution for RF and mixed-signal ICs.
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