一种电阻栅InAlAs/InGaAs/ inp2deg CCD

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307322

D. V. Rossi, A. Cheng, H. Wieder, E. Fossum

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引用次数: 0

摘要

报道了首个在in /sub 0.52/Al/sub 0.48/As/ in /sub 0.53/Ga/sub 0.47/As/InP材料体系中制备的二维电子气电荷耦合器件(CCD)。该器件实现为31级、四相、电阻门延迟线，并具有片上2DEG-FET源-跟随器。每次传输效率为0.995.>

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A resistive-gate InAlAs/InGaAs/InP 2DEG CCD

The first two-dimensional electron gas (2DEG) charge-coupled device (CCD) fabricated in the In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP materials system is reported. The device is implemented as a 31-stage, four-phase, resistive-gate delay line, and features an on-chip 2DEG-FET source-follower. The per-transfer efficiency is measured to be 0.995.<>

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1992 International Technical Digest on Electron Devices Meeting

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