Michele Castriotta, Alexander Falbo, Luca Orsenigo, Fabio Olivieri, G. Ferrari
{"title":"用于单光子发射二极管的CMOS驱动电路,工作温度低至77k","authors":"Michele Castriotta, Alexander Falbo, Luca Orsenigo, Fabio Olivieri, G. Ferrari","doi":"10.1109/prime55000.2022.9816818","DOIUrl":null,"url":null,"abstract":"A fully-integrated CMOS driving circuit for single-photon emitting diodes in silicon, optimized for space applications, is presented. The electronics comprises two 10-bit DACs in order to precisely set the on and off voltages of the diode based on the measured temperature by an integrated temperature sensor. A large driving voltage range of 0-5 V guarantees the maximum flexibility in the working temperature range from 77 K to 300 K. The chip also contains a pulse generator, capable of driving the diode with short pulses down to 20 ns triggered by an external signal, which is essential in a single-photon light source. The integrated circuit is realized in standard 150-nm CMOS technology, with a chip area of 1.2 mm2 and a power consumption less than 6mW.","PeriodicalId":142196,"journal":{"name":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CMOS driving circuit operating down to 77 K for single-photon emitting diode\",\"authors\":\"Michele Castriotta, Alexander Falbo, Luca Orsenigo, Fabio Olivieri, G. Ferrari\",\"doi\":\"10.1109/prime55000.2022.9816818\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully-integrated CMOS driving circuit for single-photon emitting diodes in silicon, optimized for space applications, is presented. The electronics comprises two 10-bit DACs in order to precisely set the on and off voltages of the diode based on the measured temperature by an integrated temperature sensor. A large driving voltage range of 0-5 V guarantees the maximum flexibility in the working temperature range from 77 K to 300 K. The chip also contains a pulse generator, capable of driving the diode with short pulses down to 20 ns triggered by an external signal, which is essential in a single-photon light source. The integrated circuit is realized in standard 150-nm CMOS technology, with a chip area of 1.2 mm2 and a power consumption less than 6mW.\",\"PeriodicalId\":142196,\"journal\":{\"name\":\"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)\",\"volume\":\"134 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/prime55000.2022.9816818\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/prime55000.2022.9816818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CMOS driving circuit operating down to 77 K for single-photon emitting diode
A fully-integrated CMOS driving circuit for single-photon emitting diodes in silicon, optimized for space applications, is presented. The electronics comprises two 10-bit DACs in order to precisely set the on and off voltages of the diode based on the measured temperature by an integrated temperature sensor. A large driving voltage range of 0-5 V guarantees the maximum flexibility in the working temperature range from 77 K to 300 K. The chip also contains a pulse generator, capable of driving the diode with short pulses down to 20 ns triggered by an external signal, which is essential in a single-photon light source. The integrated circuit is realized in standard 150-nm CMOS technology, with a chip area of 1.2 mm2 and a power consumption less than 6mW.