簇硼注入Si中的载流子活化

H. Onoda, N. Hamamoto, T. Nagayama, M. Tanjyo, S. Umisedo, N. Maehara, Y. Kawamura, Y. Nakashima, M. Hashimoto, H. Yoshimi, S. Sezaki, K. Kawakami, J. Reyes, S. Prussin
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引用次数: 2

摘要

研究了B18+(十八硼烷:B18H11+)簇注入Si和BF2束线注入Si后,硼的保留剂量和RTA后载体活化情况。SIMS深度剖面积分估计的B18样品的保留剂量较高。在相同的植入剂量下,B18样品中的载流子浓度几乎是BF2样品的两倍,尽管两者的迁移率几乎相同。这意味着B18样品的活化比BF2样品高得多。这是簇离子注入的优点之一。
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Carrier activation in cluster boron implanted Si
Boron retained dose and carrier activation after spike RTA in Cluster B18+ (Octadecaborane : B18H11+) implanted Si have been investigated comparing with BF2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B18 samples. In the same implant set dose, carrier concentrations in B18 samples show almost twice compared with BF2 samples although mobilities are almost the same in both samples. This means that activation ratio of B18 sample is much higher compared with that of BF2 sample. This is one of the advantages of cluster ion implantation.
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