{"title":"基于垂直x射线光导门控A - igzo TFT的直接转换x射线探测器","authors":"Yangbing Xu, Jun Chen, Kai Wang","doi":"10.1109/CAD-TFT.2018.8608109","DOIUrl":null,"url":null,"abstract":"We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Direct-Conversion X-ray Detector Based on A Vertical X-ray Photoconductor-Gated a-IGZO TFT\",\"authors\":\"Yangbing Xu, Jun Chen, Kai Wang\",\"doi\":\"10.1109/CAD-TFT.2018.8608109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.\",\"PeriodicalId\":146962,\"journal\":{\"name\":\"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAD-TFT.2018.8608109\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2018.8608109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Direct-Conversion X-ray Detector Based on A Vertical X-ray Photoconductor-Gated a-IGZO TFT
We proposed a novel direct X-ray detector combining a vertical X-ray photoconductor with a readout a-IGZO TFT to form an active pixel sensor. The TCAD simulation results showed that the threshold voltage of this vertical photoconductor-gated TFT had a sensitivity parameter of γ=−1.42. The followed experimental results showed that the γ value can reach up to −2.11. Together with high mobility and low dark current that a-IGZO TFT generally has, the proposed detector can potentially enable high resolution, high sensitivity, and low noise dynamic X-ray imaging.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
