Design and Simulation of In0.53Ga0.47As/InP Trench-Gate Power MOSFET to Improve the Device Performance

In this paper, a group III-V channel material In0.53Ga0.47As/InP based hetero dielectric trench-gate (HD-TG) power MOSFET (HD-TG-MOSFET) is presented for low voltage application. This model is employing band-to-band tunneling phenomena at the interface of n- In0.53Ga0.47As drift region and n⁺InP drain region. The proposed device contains a trench within both sides of the source of In0.53Ga0.47As body and n-In0.53Ga0.47As drift region which makes the parallel conduction of the channel from the source to drain. So, there is a reduction of surface field effect in the channel which improves the other device performance parameter. HD-TG-MOSFET offers low Ron and improved transconductance due to the use of high mobility material In0.53Ga0.47As in the channel region. From the 2D TCAD device simulation, it is demonstrated that the proposed device shows improved device performance in terms of On-resistance, peak trans-conductance, and drain current which is suitable for high speed and low power applications as compared to the conventional trench gate (C-TG) power MOSFET.