S. Deshpande, A. Ozcan, D. Wall, Eunha Kim, O. Gluschenkov
{"title":"用于32nm以下逻辑器件的先进结形成","authors":"S. Deshpande, A. Ozcan, D. Wall, Eunha Kim, O. Gluschenkov","doi":"10.1109/IWJT.2010.5474970","DOIUrl":null,"url":null,"abstract":"This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel stress retention and shallow junctions in today's advanced device nodes.","PeriodicalId":205070,"journal":{"name":"2010 International Workshop on Junction Technology Extended Abstracts","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Advanced junction formation for sub-32nm logic devices\",\"authors\":\"S. Deshpande, A. Ozcan, D. Wall, Eunha Kim, O. Gluschenkov\",\"doi\":\"10.1109/IWJT.2010.5474970\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel stress retention and shallow junctions in today's advanced device nodes.\",\"PeriodicalId\":205070,\"journal\":{\"name\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Workshop on Junction Technology Extended Abstracts\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2010.5474970\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Workshop on Junction Technology Extended Abstracts","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2010.5474970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advanced junction formation for sub-32nm logic devices
This paper is meant to be a general overview of recent advances in new processes and process tooling (implant and anneal) for advanced junction formation. Also included are details of impact of novel implant processes, such as cold implant and pre-amorphization (PAI) implants on Nickel Silicide (NiSi) formation. We will also discuss subtle impacts of wafer temperature during ion implantation on channel stress retention and shallow junctions in today's advanced device nodes.
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