{"title":"强脉冲光离子束在材料科学中的应用","authors":"K. Yatsui, Wenhui Jiang, N. Harada, T. Sonegawa","doi":"10.1109/BEAMS.1998.822398","DOIUrl":null,"url":null,"abstract":"By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin films. In addition to standard front side deposition by IBE (FS/IBE), where a substrate is located in front of the target, significant improvement has been achieved of the film quality by back side deposition (BS/IBE), where the substrate is placed just behind the holder. Characteristics of the films by BS/IBE are shown. By rapid cooling of IBAP, we synthesized nanosize powders. Fullerene has also been successfully prepared. Furthermore, foil acceleration has been studied by the irradiation of LIE on a target. Quick overview is given on the applications of IBAP in materials science.","PeriodicalId":410823,"journal":{"name":"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)","volume":"410 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Applications of intense pulsed light ion beams to materials science\",\"authors\":\"K. Yatsui, Wenhui Jiang, N. Harada, T. Sonegawa\",\"doi\":\"10.1109/BEAMS.1998.822398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin films. In addition to standard front side deposition by IBE (FS/IBE), where a substrate is located in front of the target, significant improvement has been achieved of the film quality by back side deposition (BS/IBE), where the substrate is placed just behind the holder. Characteristics of the films by BS/IBE are shown. By rapid cooling of IBAP, we synthesized nanosize powders. Fullerene has also been successfully prepared. Furthermore, foil acceleration has been studied by the irradiation of LIE on a target. Quick overview is given on the applications of IBAP in materials science.\",\"PeriodicalId\":410823,\"journal\":{\"name\":\"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)\",\"volume\":\"410 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BEAMS.1998.822398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEAMS.1998.822398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Applications of intense pulsed light ion beams to materials science
By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin films. In addition to standard front side deposition by IBE (FS/IBE), where a substrate is located in front of the target, significant improvement has been achieved of the film quality by back side deposition (BS/IBE), where the substrate is placed just behind the holder. Characteristics of the films by BS/IBE are shown. By rapid cooling of IBAP, we synthesized nanosize powders. Fullerene has also been successfully prepared. Furthermore, foil acceleration has been studied by the irradiation of LIE on a target. Quick overview is given on the applications of IBAP in materials science.
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