An experiment-based model for focused ion beam simulation and the process design optimization

An experiment-based model, which differs from the current curve fitting and particle motion models, is presented for simulating the Focused Ion Beam (FIB) process and guiding the scan strategy and parameter design. This approach applies Gaussian function fitting on both etching and deposition, and builds an expectation difference function to describe the distance changes between the distribution centers of the etching and the redeposition, which shows good performance in solving the redeposition effect and its attenuation. Through a series of basic experiments, we optimize the model parameters and demonstrate that this method can effectively simulate the dynamic process of FIB sputtering. This model and the optimized parameters are further applied to the scan strategy and process parameter optimization for the complex Micro/Nano-structure realizations using FIB.