{"title":"igbt -双极分立达灵顿功率开关:性能和设计","authors":"S. Biswas, B. Basak, K. Rajashekara","doi":"10.1109/IAS.1991.178056","DOIUrl":null,"url":null,"abstract":"An IGBT (insulated-gate bipolar transistor)-bipolar discrete Darlington power switch is presented. The main high-current bipolar power switch is driven by a lower current IGBT, yielding a switch with low drive requirements and high current handling capacity. The power dissipation is lower than that of a MOS-bipolar Darlington. The behavior of such a switch is investigated using discrete device models and an important parasitic network. Some of the important design parameters of the switch and drive circuit are discussed together with possible ways of improving circuit performance. Some aspects of protection and paralleling are also presented. The analysis and discussions are supported by oscillograms from laboratory experiments.<<ETX>>","PeriodicalId":294244,"journal":{"name":"Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"IGBT-bipolar discrete Darlington power switches: performance and design\",\"authors\":\"S. Biswas, B. Basak, K. Rajashekara\",\"doi\":\"10.1109/IAS.1991.178056\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An IGBT (insulated-gate bipolar transistor)-bipolar discrete Darlington power switch is presented. The main high-current bipolar power switch is driven by a lower current IGBT, yielding a switch with low drive requirements and high current handling capacity. The power dissipation is lower than that of a MOS-bipolar Darlington. The behavior of such a switch is investigated using discrete device models and an important parasitic network. Some of the important design parameters of the switch and drive circuit are discussed together with possible ways of improving circuit performance. Some aspects of protection and paralleling are also presented. The analysis and discussions are supported by oscillograms from laboratory experiments.<<ETX>>\",\"PeriodicalId\":294244,\"journal\":{\"name\":\"Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-09-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IAS.1991.178056\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the 1991 IEEE Industry Applications Society Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IAS.1991.178056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
IGBT-bipolar discrete Darlington power switches: performance and design
An IGBT (insulated-gate bipolar transistor)-bipolar discrete Darlington power switch is presented. The main high-current bipolar power switch is driven by a lower current IGBT, yielding a switch with low drive requirements and high current handling capacity. The power dissipation is lower than that of a MOS-bipolar Darlington. The behavior of such a switch is investigated using discrete device models and an important parasitic network. Some of the important design parameters of the switch and drive circuit are discussed together with possible ways of improving circuit performance. Some aspects of protection and paralleling are also presented. The analysis and discussions are supported by oscillograms from laboratory experiments.<>
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