{"title":"一种改进的功率MOSFET仿真模型","authors":"B. Zhou, Zhiming Chen, Shoujue Wang","doi":"10.1109/TENCON.1995.496433","DOIUrl":null,"url":null,"abstract":"A new model is proposed to make a more precise simulation of a power MOSFET using PSPICE. The application results for all types of HEXFET devices have a good agreement with the corresponding curves in the IR databook. A method of parameter extraction and some simulation results are presented for a demonstration HEXFET device.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"An improved simulation model for power MOSFET\",\"authors\":\"B. Zhou, Zhiming Chen, Shoujue Wang\",\"doi\":\"10.1109/TENCON.1995.496433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new model is proposed to make a more precise simulation of a power MOSFET using PSPICE. The application results for all types of HEXFET devices have a good agreement with the corresponding curves in the IR databook. A method of parameter extraction and some simulation results are presented for a demonstration HEXFET device.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new model is proposed to make a more precise simulation of a power MOSFET using PSPICE. The application results for all types of HEXFET devices have a good agreement with the corresponding curves in the IR databook. A method of parameter extraction and some simulation results are presented for a demonstration HEXFET device.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
