{"title":"采用横向pnp双极晶体管的CMOS模拟正弦函数发生器","authors":"M. Pessatti, C. dos Reis Filho","doi":"10.1109/ICCDCS.2002.1004017","DOIUrl":null,"url":null,"abstract":"An implementation in CMOS technology of the ingenious analog sine function generator invented by Barrie Gilbert over two decades ago (Electron. Lett., vol. 13, pp. 506-508, 1977) is described in this paper. New in this circuit is the use of lateral-PNP bipolar transistors to build the core of the sine generator together with MOS transistors in the saturation region making up the rest of the circuit. Experimental results from prototypes of the circuit fabricated in 0.8 /spl mu/m CMOS technology showed that the accuracy of the produced sine is lower than that reported from implementations in bipolar and BiCMOS technologies (dos Reis Filho and Fruett, Proc. ICECS'97, 1997). The measured deviation from ideal sine over the (-/spl pi//2 to +/spl pi//2) range is less than 0.5%. Total harmonic distortion measured for a fundamental frequency at 20 kHz and the next four harmonics is approximately 1%. This circuit could be used in several applications, including the AC excitation of bridge-type sensors as a replacement for sinusoidal oscillators.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"24 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"CMOS analog sine function generator using lateral-PNP bipolar transistors\",\"authors\":\"M. Pessatti, C. dos Reis Filho\",\"doi\":\"10.1109/ICCDCS.2002.1004017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An implementation in CMOS technology of the ingenious analog sine function generator invented by Barrie Gilbert over two decades ago (Electron. Lett., vol. 13, pp. 506-508, 1977) is described in this paper. New in this circuit is the use of lateral-PNP bipolar transistors to build the core of the sine generator together with MOS transistors in the saturation region making up the rest of the circuit. Experimental results from prototypes of the circuit fabricated in 0.8 /spl mu/m CMOS technology showed that the accuracy of the produced sine is lower than that reported from implementations in bipolar and BiCMOS technologies (dos Reis Filho and Fruett, Proc. ICECS'97, 1997). The measured deviation from ideal sine over the (-/spl pi//2 to +/spl pi//2) range is less than 0.5%. Total harmonic distortion measured for a fundamental frequency at 20 kHz and the next four harmonics is approximately 1%. This circuit could be used in several applications, including the AC excitation of bridge-type sensors as a replacement for sinusoidal oscillators.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"24 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
摘要
在CMOS技术的实现巧妙的模拟正弦函数发生器由巴里·吉尔伯特发明了二十多年前(电子。列托人。(第13卷,第506-508页,1977年)。该电路的新特点是使用横向pnp双极晶体管来构建正弦发生器的核心,并在饱和区域使用MOS晶体管构成电路的其余部分。以0.8 /spl mu/m CMOS技术制造的电路原型的实验结果表明,所产生的正弦精度低于双极和BiCMOS技术实现的精度(dos Reis Filho和Fruett, Proc. ICECS'97, 1997)。在(-/spl pi//2至+/spl pi//2)范围内,与理想正弦值的测量偏差小于0.5%。在20千赫的基频和接下来的四个谐波测量的总谐波失真约为1%。该电路可用于多种应用,包括桥式传感器的交流励磁作为正弦振荡器的替代品。
CMOS analog sine function generator using lateral-PNP bipolar transistors
An implementation in CMOS technology of the ingenious analog sine function generator invented by Barrie Gilbert over two decades ago (Electron. Lett., vol. 13, pp. 506-508, 1977) is described in this paper. New in this circuit is the use of lateral-PNP bipolar transistors to build the core of the sine generator together with MOS transistors in the saturation region making up the rest of the circuit. Experimental results from prototypes of the circuit fabricated in 0.8 /spl mu/m CMOS technology showed that the accuracy of the produced sine is lower than that reported from implementations in bipolar and BiCMOS technologies (dos Reis Filho and Fruett, Proc. ICECS'97, 1997). The measured deviation from ideal sine over the (-/spl pi//2 to +/spl pi//2) range is less than 0.5%. Total harmonic distortion measured for a fundamental frequency at 20 kHz and the next four harmonics is approximately 1%. This circuit could be used in several applications, including the AC excitation of bridge-type sensors as a replacement for sinusoidal oscillators.