{"title":"SiC超结igbt的高柱掺杂浓度","authors":"H. Kang, F. Udrea","doi":"10.1109/SMICND.2018.8539824","DOIUrl":null,"url":null,"abstract":"This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High Pillar Doping Concentration for SiC Superjunction IGBTs\",\"authors\":\"H. Kang, F. Udrea\",\"doi\":\"10.1109/SMICND.2018.8539824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.\",\"PeriodicalId\":247062,\"journal\":{\"name\":\"2018 International Semiconductor Conference (CAS)\",\"volume\":\"173 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2018.8539824\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2018.8539824","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Pillar Doping Concentration for SiC Superjunction IGBTs
This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
