{"title":"高温、高可靠性汽车EEPROM设计","authors":"J. Walsh, G. Scott","doi":"10.1109/CICC.2006.320818","DOIUrl":null,"url":null,"abstract":"An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High-Temperature, High Reliability EEPROM Design For Automotive Applications\",\"authors\":\"J. Walsh, G. Scott\",\"doi\":\"10.1109/CICC.2006.320818\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping\",\"PeriodicalId\":269854,\"journal\":{\"name\":\"IEEE Custom Integrated Circuits Conference 2006\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Custom Integrated Circuits Conference 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2006.320818\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-Temperature, High Reliability EEPROM Design For Automotive Applications
An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping
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