Koki Tsushima, Xu Han, T. Ishizaki, Takuto Shirai, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura
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Buried heterostructure laser diodes using directly bonded InP thin film on silicon substrate
Successful lasing of buried heterostructure GaInAsP SCH MQW laser diode on silicon substrate has been achieved. BH laser structure was obtained by wet etching and a few steps MOVPE regrowth using directly bonded InP/Si substrate.
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