超低功耗应用的无结复合晶体管

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI:10.1109/INEC.2014.7460447

Anand Kumar, M. Parihar, A. Kranti

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引用次数: 0

摘要

在这项工作中，我们研究了超低功耗(ULP)复合晶体管在传统反转模式(INV)和无结(JL)拓扑下的行为。JL ULP晶体管在高温下具有更高的通断电流比和更低的漏电流。采用复合晶体管设计的JL ULP逆变器具有增强的噪声裕度。这项工作为实现未来无结晶体管ULP电路提供了新的机会。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Junctionless composite transistor for Ultra Low Power applications

In this work, we investigate the behavior of an Ultra Low Power (ULP) composite transistor in conventional inversion mode (INV) and junctionless (JL) topologies. JL ULP transistor shows enhanced on-to-off current ratio and lower leakage current at elevated temperatures. JL ULP inverter designed with composite transistor shows enhanced noise margin. The work demonstrates new opportunities for realizing future ULP circuits with junctionless transistor.

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2014 IEEE International Nanoelectronics Conference (INEC)

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