{"title":"主结侧阻区对高压frd坚固性的贡献:一种新的见解","authors":"Peng Li, Yuehua Wu, J. Wen, Lei Cui, Chenjing Liu","doi":"10.1109/EDSSC.2017.8126523","DOIUrl":null,"url":null,"abstract":"For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.","PeriodicalId":163598,"journal":{"name":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"The contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage FRDs: A new insight\",\"authors\":\"Peng Li, Yuehua Wu, J. Wen, Lei Cui, Chenjing Liu\",\"doi\":\"10.1109/EDSSC.2017.8126523\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.\",\"PeriodicalId\":163598,\"journal\":{\"name\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2017.8126523\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2017.8126523","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage FRDs: A new insight
For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.