{"title":"石墨烯热敏电阻的设计、制造和表征","authors":"H. Al-Mumen, F. Rao, Lixin Dong, Wen Li","doi":"10.1109/NEMS.2013.6559922","DOIUrl":null,"url":null,"abstract":"This paper reported a new application of graphene that is graphened thermistor. Mono-layer, bi-layer and few-layer graphene devices with different dimensions were designed and fabricated. Temperature sensing behavior of graphene has been studied in a small temperature range from room temperature (RT) to 80°C because this range is important in electronic instrumentations and integrated circuit design. Thermal inertia of the graphenes was studied at a temperature of 80°C and the sensing behavior was characterized by measuring the time response of the normalized resistances. Our preliminary results demonstrated a higher negative temperature coefficient of the bilayer graphene those of mono-layer and few-layer graphenes. In addition, engineered graphene resistance based on its dimension has been investigated. This technique provides a strong candidate for temperature sensing in the micro and nano industrial applications with high reliability, high sensitivity and low cost.","PeriodicalId":308928,"journal":{"name":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"Design, fabrication, and characterization of graphene thermistor\",\"authors\":\"H. Al-Mumen, F. Rao, Lixin Dong, Wen Li\",\"doi\":\"10.1109/NEMS.2013.6559922\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reported a new application of graphene that is graphened thermistor. Mono-layer, bi-layer and few-layer graphene devices with different dimensions were designed and fabricated. Temperature sensing behavior of graphene has been studied in a small temperature range from room temperature (RT) to 80°C because this range is important in electronic instrumentations and integrated circuit design. Thermal inertia of the graphenes was studied at a temperature of 80°C and the sensing behavior was characterized by measuring the time response of the normalized resistances. Our preliminary results demonstrated a higher negative temperature coefficient of the bilayer graphene those of mono-layer and few-layer graphenes. In addition, engineered graphene resistance based on its dimension has been investigated. This technique provides a strong candidate for temperature sensing in the micro and nano industrial applications with high reliability, high sensitivity and low cost.\",\"PeriodicalId\":308928,\"journal\":{\"name\":\"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2013.6559922\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2013.6559922","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design, fabrication, and characterization of graphene thermistor
This paper reported a new application of graphene that is graphened thermistor. Mono-layer, bi-layer and few-layer graphene devices with different dimensions were designed and fabricated. Temperature sensing behavior of graphene has been studied in a small temperature range from room temperature (RT) to 80°C because this range is important in electronic instrumentations and integrated circuit design. Thermal inertia of the graphenes was studied at a temperature of 80°C and the sensing behavior was characterized by measuring the time response of the normalized resistances. Our preliminary results demonstrated a higher negative temperature coefficient of the bilayer graphene those of mono-layer and few-layer graphenes. In addition, engineered graphene resistance based on its dimension has been investigated. This technique provides a strong candidate for temperature sensing in the micro and nano industrial applications with high reliability, high sensitivity and low cost.