高温带隙参考PDSOI CMOS，工作温度高达300°C

2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2012-11-01 DOI:10.1109/RFIT.2012.6401630

J. Pathrose, Xiaohui Gong, L. Zou, J. Koh, K. Chai, M. Je, Y. Xu

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引用次数: 6

摘要

本文描述了一种温度范围高达300°C的带隙基准。该带隙基准器件采用PDSOI CMOS技术制造，在25 ~ 300℃范围内，盒型温度系数为138ppm，线路调节小于1.5mv/V。几个样品的最小工作电压为2V，室温下功耗仅为285μW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300°C

This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples.

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2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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