{"title":"高k nmosfet中快速和慢速电荷捕获/去捕获过程","authors":"D. Heh, R. Choi, C. Young, G. Bersuker","doi":"10.1109/IRWS.2006.305224","DOIUrl":null,"url":null,"abstract":"A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time","PeriodicalId":199223,"journal":{"name":"2006 IEEE International Integrated Reliability Workshop Final Report","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Fast and slow charge trapping/detrapping processes in high-k nMOSFETs\",\"authors\":\"D. Heh, R. Choi, C. Young, G. Bersuker\",\"doi\":\"10.1109/IRWS.2006.305224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time\",\"PeriodicalId\":199223,\"journal\":{\"name\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2006.305224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2006.305224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fast and slow charge trapping/detrapping processes in high-k nMOSFETs
A single pulse technique with a wide range of pulse times has been applied to study trap charging and discharging mechanisms in nMOSFET high-k devices. It is shown that both charging and discharging are controlled by two distinctive processes with different characteristic times. A proposed characterization methodology, which separates the relaxation effects associated with the fast transient charging/discharging processes, allows extracting the intrinsic dependence of threshold voltage on stress time
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