功率器件用宽带隙半导体SiC的研究进展

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856762

H. Matsunami

{"title":"功率器件用宽带隙半导体SiC的研究进展","authors":"H. Matsunami","doi":"10.1109/ISPSD.2000.856762","DOIUrl":null,"url":null,"abstract":"The progress in SiC crystal growth of bulk and epitaxial layers for power devices is reviewed. Current status in device processes is introduced. Then, the state-of-the-art SiC power devices are described. \"On-resistance\" in vertical power MOSFETs which determines the power loss is discussed, and recent progress in SiC MOSFET performance is presented by improving channel mobilities.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Progress in wide bandgap semiconductor SiC for power devices\",\"authors\":\"H. Matsunami\",\"doi\":\"10.1109/ISPSD.2000.856762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The progress in SiC crystal growth of bulk and epitaxial layers for power devices is reviewed. Current status in device processes is introduced. Then, the state-of-the-art SiC power devices are described. \\\"On-resistance\\\" in vertical power MOSFETs which determines the power loss is discussed, and recent progress in SiC MOSFET performance is presented by improving channel mobilities.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

综述了大功率器件体外延层SiC晶体生长的研究进展。介绍了设备进程的现状。然后，介绍了最先进的SiC功率器件。讨论了垂直功率MOSFET中决定功率损耗的“导通电阻”，并介绍了提高沟道迁移率在SiC MOSFET性能方面的最新进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Progress in wide bandgap semiconductor SiC for power devices

The progress in SiC crystal growth of bulk and epitaxial layers for power devices is reviewed. Current status in device processes is introduced. Then, the state-of-the-art SiC power devices are described. "On-resistance" in vertical power MOSFETs which determines the power loss is discussed, and recent progress in SiC MOSFET performance is presented by improving channel mobilities.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

自引率

0.00%

发文量

期刊最新文献

Complementary LDMOS transistors for a CMOS/BiCMOS process Using "Adaptive resurf" to improve the SOA of LDMOS transistors Evaluation of 600 V/100 A NPT-IGBT with a non-self-align shallow p-well formation techniques A novel free wheeling diode for 1700 V IGBT module Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters