{"title":"变形对Ga2O3-In2O3薄膜电导率的影响","authors":"A. Kozlov, E. A. Kurdyukova","doi":"10.1109/INTERNANO.2009.5335642","DOIUrl":null,"url":null,"abstract":"Thin films of Ga<inf>2</inf>O<inf>3</inf>-In<inf>2</inf>O<inf>3</inf> are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The influence of deformation on conductivity of Ga2O3-In2O3 thin films\",\"authors\":\"A. Kozlov, E. A. Kurdyukova\",\"doi\":\"10.1109/INTERNANO.2009.5335642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin films of Ga<inf>2</inf>O<inf>3</inf>-In<inf>2</inf>O<inf>3</inf> are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.\",\"PeriodicalId\":376370,\"journal\":{\"name\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTERNANO.2009.5335642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTERNANO.2009.5335642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The influence of deformation on conductivity of Ga2O3-In2O3 thin films
Thin films of Ga2O3-In2O3 are obtained by magnetron deposition with further thermal oxidation. Dependences of resistance variation on time under strain and on strain value are observed. The model for explaining the obtained results is developed. It is based on the barrier conductivity of polycrystalline oxide semiconductor materials.
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