Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335637
A. Shestakov, K. Zhuravlev, V. A. Arykov, V. A. Kagadey
In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.
{"title":"Impurities and doping influence on characteristics of GaAs field effect transistor with Schottky barrier","authors":"A. Shestakov, K. Zhuravlev, V. A. Arykov, V. A. Kagadey","doi":"10.1109/INTERNANO.2009.5335637","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335637","url":null,"abstract":"In this work ion-implanted MESFET was modeled and its characteristics dependence from substrate was found. Concentrations of deep and shallow centers in substrate were found.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"2007 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114040507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335631
Vladimir M. Lubimskiy
An analytical equations for deflections of the long rectangular multilayer plate under the concentrated load are obtained. These equations allows to calculate the deflections of plates, complete elastic strains and mechanical stresses in layers.
{"title":"Rectangular multilayer plate under concentrated load","authors":"Vladimir M. Lubimskiy","doi":"10.1109/INTERNANO.2009.5335631","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335631","url":null,"abstract":"An analytical equations for deflections of the long rectangular multilayer plate under the concentrated load are obtained. These equations allows to calculate the deflections of plates, complete elastic strains and mechanical stresses in layers.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"233 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126250812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335644
A. Lyamkina, D. Dmitriev, S. P. Moshchenko, Y. G. Galitsyn, A. Toropov
In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 µm and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.
{"title":"Elastic strain driven change of growth mode in indium arsenide heteroepitaxy on (001) gallium arsenide","authors":"A. Lyamkina, D. Dmitriev, S. P. Moshchenko, Y. G. Galitsyn, A. Toropov","doi":"10.1109/INTERNANO.2009.5335644","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335644","url":null,"abstract":"In this work we investigate indium dose dependence of optical properties of quantum dot fabricated by droplet epitaxy. Photoluminescence measurements demonstrate red shift to 1.3 µm and considerable change of a dot spectra form with peak number increase. The Gaussians decomposition analysis revealed some characteristic peak widths corresponded to different QD groups. One width is close to Stranski-Krastanov growth mode value, measured on our analogical samples. It indicates that since some indium amount there is transition of droplet to SK growth mode.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123183062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335619
D. Nikulin, V. V. Chesnokov, D. V. Chesnokov
A converter-display device for optoelectronic imaging is considered in this work. The image scanning is carried out by modulated elastic waves traveling on a one-dimensional matrix of microme-chanical strip waveguides [1]. Waveguides are formed by dividing a silicon membrane on parallel strips, which are attached to a supporting silicon frame by their ends. When individual excitating of all waveguides using the appropriate piezoelectric transducers, the surface of the display device will contain N ×M relief elements, where N - number of waveguides, M -number of separated bending deformations
{"title":"The control of elastic traveling waves in thin-film free structures","authors":"D. Nikulin, V. V. Chesnokov, D. V. Chesnokov","doi":"10.1109/INTERNANO.2009.5335619","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335619","url":null,"abstract":"A converter-display device for optoelectronic imaging is considered in this work. The image scanning is carried out by modulated elastic waves traveling on a one-dimensional matrix of microme-chanical strip waveguides [1]. Waveguides are formed by dividing a silicon membrane on parallel strips, which are attached to a supporting silicon frame by their ends. When individual excitating of all waveguides using the appropriate piezoelectric transducers, the surface of the display device will contain N ×M relief elements, where N - number of waveguides, M -number of separated bending deformations","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127058639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335640
B. G. Vainer
In this review paper the peculiarities of using the indium arsenide multielement CID photodetectors in multi-channel spectrometry and FPA-based infrared thermography are presented. It is shown that the short-wave narrow band infrared thermography and wide band spectrometry realized on the base of such detectors are able to solve in full measure the problems inherent to the above-mentioned scientific-technical areas.
{"title":"Infrared thermography and spectrometry realized by the use of indium arsenide multielement CID photodetectors","authors":"B. G. Vainer","doi":"10.1109/INTERNANO.2009.5335640","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335640","url":null,"abstract":"In this review paper the peculiarities of using the indium arsenide multielement CID photodetectors in multi-channel spectrometry and FPA-based infrared thermography are presented. It is shown that the short-wave narrow band infrared thermography and wide band spectrometry realized on the base of such detectors are able to solve in full measure the problems inherent to the above-mentioned scientific-technical areas.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"662 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115123221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335624
A. S. Syrneva, V. V. Chesnokov, Dimetriy V. Checnokov
The optical filter under development employing frustrated total internal reflection is a micro-mechanical device containing two silicon rectangular prisms. There is a flat silicon plane among hypotenuse edges of the prisms. The silicon plane is a Fabry-Perot resonator, with clearances h1 among the plate and prism edges being its mirrors. Theoretical resolution of the optical filter would be R ≈ 1,5·103 if h1= 50 µm and R ≈ 3·105 if h1 = 100 µm with the thickness of the silicon plane being h = 65 µm; wavelength λ = 100 µm; free spectral region Δλ/λ ≈ 0,3…0,4, transmission in the maximum of spectral characteristics 0,6 (provided input and output silicon prism legs bloom).
{"title":"Radiation filters for the terahertz range using total internal reflection phenomenon","authors":"A. S. Syrneva, V. V. Chesnokov, Dimetriy V. Checnokov","doi":"10.1109/INTERNANO.2009.5335624","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335624","url":null,"abstract":"The optical filter under development employing frustrated total internal reflection is a micro-mechanical device containing two silicon rectangular prisms. There is a flat silicon plane among hypotenuse edges of the prisms. The silicon plane is a Fabry-Perot resonator, with clearances h<inf>1</inf> among the plate and prism edges being its mirrors. Theoretical resolution of the optical filter would be R ≈ 1,5·10<sup>3</sup> if h<inf>1</inf>= 50 µm and R ≈ 3·10<sup>5</sup> if h<inf>1</inf> = 100 µm with the thickness of the silicon plane being h = 65 µm; wavelength λ = 100 µm; free spectral region Δλ/λ ≈ 0,3…0,4, transmission in the maximum of spectral characteristics 0,6 (provided input and output silicon prism legs bloom).","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114182276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335633
K. Astankova, E. B. Gorokhov, V. Volodin, A. Latyshev, M. Vergnat
The process of formation and decomposition of solid films of germanium monoxide from GeO vapor was studied using physical and chemical approaches. A model clarifying the metastability of solid GeO is developed. According the model, the structure of atomic orbitals (σ- and n- bonds) of a GeO molecule causes the stability of GeO in gaseous phase. After condensation GeO(gas) <-> GeO(solid), the atomic orbitals of Ge are transformed in lowest energy sp3-hybridized configuration, this configuration is universal both for Ge and for Ge02. The decomposition of GeO(solid) into Ge and GeO2 is caused by relaxation of deformation energy appearing due to big difference of Ge-Ge and Ge-O bond length.
{"title":"The decomposition mechanism of metastable solid GeO film","authors":"K. Astankova, E. B. Gorokhov, V. Volodin, A. Latyshev, M. Vergnat","doi":"10.1109/INTERNANO.2009.5335633","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335633","url":null,"abstract":"The process of formation and decomposition of solid films of germanium monoxide from GeO vapor was studied using physical and chemical approaches. A model clarifying the metastability of solid GeO is developed. According the model, the structure of atomic orbitals (σ- and n- bonds) of a GeO molecule causes the stability of GeO in gaseous phase. After condensation GeO(gas) <-> GeO(solid), the atomic orbitals of Ge are transformed in lowest energy sp3-hybridized configuration, this configuration is universal both for Ge and for Ge02. The decomposition of GeO(solid) into Ge and GeO2 is caused by relaxation of deformation energy appearing due to big difference of Ge-Ge and Ge-O bond length.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121407979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335635
A. Blokhin, B. Semisalov
We propose and describe in detail the numerical algorithms for finding the stationary solutions of gas dynamic model of charge transport in semiconductors.
我们提出并详细描述了寻找半导体中电荷输运气体动力学模型的固定解的数值算法。
{"title":"The construction of one class of numerical algorithms in ballistic diode problem","authors":"A. Blokhin, B. Semisalov","doi":"10.1109/INTERNANO.2009.5335635","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335635","url":null,"abstract":"We propose and describe in detail the numerical algorithms for finding the stationary solutions of gas dynamic model of charge transport in semiconductors.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121902586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335639
A. Nastovjak, I. Neizvestny, N. Shwartz
Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R2 for diffusion growth mode and radius independent for adsorption mode.
{"title":"Investigation of the details of silicon nanowhisker growth by Monte Carlo simulation","authors":"A. Nastovjak, I. Neizvestny, N. Shwartz","doi":"10.1109/INTERNANO.2009.5335639","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335639","url":null,"abstract":"Silicon nanowhisker (NW) growth was investigated by Monte Carlo simulation. Dependence of NW growth rate on radius R was obtained. Growth rate was found to be proportional to 1/R2 for diffusion growth mode and radius independent for adsorption mode.","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122441306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-13DOI: 10.1109/INTERNANO.2009.5335615
T. Kawahara
{"title":"Spin-transfer torque RAM: A road to universal memory","authors":"T. Kawahara","doi":"10.1109/INTERNANO.2009.5335615","DOIUrl":"https://doi.org/10.1109/INTERNANO.2009.5335615","url":null,"abstract":"","PeriodicalId":376370,"journal":{"name":"2009 International School and Seminar on Modern Problems of Nanoelectronics, Micro- and Nanosystem Technologies","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116559905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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