采用复合NMOS晶体管的db -线性V-I变换器

Quoc-Hoang Duong, Trung‐Kien Nguyen, H. Duong, Sang-Gug Lee
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引用次数: 3

摘要

本文提出了一种基于泰勒概念并采用NMOS晶体管的新型CMOS指数V-I变换器(EVIC)。提出的改进泰勒级数展开式用于扩展db线性输出电流范围。在0.25 /spl μ l /m CMOS工艺中,仿真结果显示输出电流范围大于22db,线性范围大于17db,线性误差小于/spl + usmn/0.5 dB。在/spl plusmn/1.5 V供电电压下,功耗小于0.3 mW。所提出的EVIC可用于超低电压、低功耗可变增益放大器(VGA)和自动增益控制(AGC)的设计。
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dB-linear V-I converter using composite NMOS transistor
A new CMOS exponential V-I converter (EVIC), based on Taylor's concept and using NMOS transistor, is presented in this paper. The proposed-modified Taylor series expansion is used to extend the dB-linear output current range. In a 0.25 /spl mu/m CMOS process, the simulations show more than 22 dB output current range and 17 dB linear range with the linearity error less than /spl plusmn/0.5 dB. The power dissipation is less than 0.3 mW with /spl plusmn/1.5 V supply voltage. The proposed EVIC can be used for the design of an extremely low-voltage and low-power variable gain amplifier (VGA) and automatic gain control (AGC).
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