{"title":"温度依赖性的功率MOSFET宏模型:参数提取与仿真","authors":"C. Leonardi, F. Frisina, R. Letor, A. Raciti","doi":"10.1109/CIPE.1998.779656","DOIUrl":null,"url":null,"abstract":"A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. A new computer aided design package that helps the designer in the parameter extraction procedure is discussed in detail. The model accuracy has been tested by comparison of the simulated waveforms with the experimental traces relative to actual devices.","PeriodicalId":250682,"journal":{"name":"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Power MOSFET macromodel accounting for temperature dependence: parameter extraction and simulation\",\"authors\":\"C. Leonardi, F. Frisina, R. Letor, A. Raciti\",\"doi\":\"10.1109/CIPE.1998.779656\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. A new computer aided design package that helps the designer in the parameter extraction procedure is discussed in detail. The model accuracy has been tested by comparison of the simulated waveforms with the experimental traces relative to actual devices.\",\"PeriodicalId\":250682,\"journal\":{\"name\":\"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CIPE.1998.779656\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"COM.P.EL.98. Record 6th Workshop on Computer in Power Electronics (Cat. No.98TH8358)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CIPE.1998.779656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power MOSFET macromodel accounting for temperature dependence: parameter extraction and simulation
A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. A new computer aided design package that helps the designer in the parameter extraction procedure is discussed in detail. The model accuracy has been tested by comparison of the simulated waveforms with the experimental traces relative to actual devices.
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