V. Astapenko, S. Sakhno, E. Khramov, A. Yakovets, E. V. Sakhno, E. S. Manuilovich
{"title":"基于椭球状半导体纳米粒子的光学等离子体传感器","authors":"V. Astapenko, S. Sakhno, E. Khramov, A. Yakovets, E. V. Sakhno, E. S. Manuilovich","doi":"10.1109/EnT47717.2019.9030577","DOIUrl":null,"url":null,"abstract":"In the work, the physico-mathematical model of an optical plasmon sensor constructed on the basis of semiconductor ellipsoidal nanoparticles is proposed. It is shown that the sensitivity of such a sensor is proportional to the value of the ellipsoid semiaxis along which polarization of acting radiation is directed.","PeriodicalId":288550,"journal":{"name":"2019 International Conference on Engineering and Telecommunication (EnT)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optical Plasmon Sensor Based on Ellipsoidal Semiconductor Nanoparticles\",\"authors\":\"V. Astapenko, S. Sakhno, E. Khramov, A. Yakovets, E. V. Sakhno, E. S. Manuilovich\",\"doi\":\"10.1109/EnT47717.2019.9030577\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the work, the physico-mathematical model of an optical plasmon sensor constructed on the basis of semiconductor ellipsoidal nanoparticles is proposed. It is shown that the sensitivity of such a sensor is proportional to the value of the ellipsoid semiaxis along which polarization of acting radiation is directed.\",\"PeriodicalId\":288550,\"journal\":{\"name\":\"2019 International Conference on Engineering and Telecommunication (EnT)\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Engineering and Telecommunication (EnT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EnT47717.2019.9030577\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Engineering and Telecommunication (EnT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EnT47717.2019.9030577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical Plasmon Sensor Based on Ellipsoidal Semiconductor Nanoparticles
In the work, the physico-mathematical model of an optical plasmon sensor constructed on the basis of semiconductor ellipsoidal nanoparticles is proposed. It is shown that the sensitivity of such a sensor is proportional to the value of the ellipsoid semiaxis along which polarization of acting radiation is directed.