E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor
{"title":"集成Balun的24GHz车载雷达低噪声放大器","authors":"E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor","doi":"10.1109/SMIC.2008.26","DOIUrl":null,"url":null,"abstract":"This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Low Noise Amplifier with Integrated Balun for 24GHz Car Radar\",\"authors\":\"E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor\",\"doi\":\"10.1109/SMIC.2008.26\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.\",\"PeriodicalId\":350325,\"journal\":{\"name\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2008.26\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.26","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
摘要
本文讨论了一种用于24 GHz短距离车载雷达的单端差分低噪声放大器(LNA)的设计、仿真和测量结果,该放大器应用于生产0.25 μ m SiGe:C-BiCMOS技术[1]。输入和两个单端输出设计为50 ω阻抗。LNA在24 GHz时可获得13.2 dB增益和4.2dB噪声系数。模拟和测量结果非常吻合。获得的增益和噪声系数与先前报道的全单端LNA一样好[2]。不需要平衡。0.55 x 0.60 mm IC从3.3 V电源消耗40 mW。
Low Noise Amplifier with Integrated Balun for 24GHz Car Radar
This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.