集成Balun的24GHz车载雷达低噪声放大器

E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor
{"title":"集成Balun的24GHz车载雷达低噪声放大器","authors":"E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor","doi":"10.1109/SMIC.2008.26","DOIUrl":null,"url":null,"abstract":"This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Low Noise Amplifier with Integrated Balun for 24GHz Car Radar\",\"authors\":\"E. van der Heijden, H. Veenstra, D. Hartskeerl, M. Notten, D. van Goor\",\"doi\":\"10.1109/SMIC.2008.26\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.\",\"PeriodicalId\":350325,\"journal\":{\"name\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2008.26\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.26","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

本文讨论了一种用于24 GHz短距离车载雷达的单端差分低噪声放大器(LNA)的设计、仿真和测量结果,该放大器应用于生产0.25 μ m SiGe:C-BiCMOS技术[1]。输入和两个单端输出设计为50 ω阻抗。LNA在24 GHz时可获得13.2 dB增益和4.2dB噪声系数。模拟和测量结果非常吻合。获得的增益和噪声系数与先前报道的全单端LNA一样好[2]。不需要平衡。0.55 x 0.60 mm IC从3.3 V电源消耗40 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Low Noise Amplifier with Integrated Balun for 24GHz Car Radar
This paper discusses the design, simulation and measurement results of a single-ended to differential Low Noise Amplifier (LNA) for 24 GHz short range car radar applications in a production 0.25 mum SiGe:C-BiCMOS technology [1]. The input and two single-ended outputs are designed for 50 Omega impedance. The LNA achieves a measured 13.2 dB gain and 4.2dB noise figure at 24 GHz. Simulations and measurements are in close agreement. The achieved gain and noise figure are as good as for an earlier reported fully single-ended LNA [2]. No balun is required. The 0.55 x 0.60 mm IC dissipates 40 mW from a 3.3 V supply.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Thick-Gate-Oxide MOS Structures with Sub-Design-Rule (SDR) Polysilicon Lengths for RF Circuit Applications SiC Varactor Based Tunable Filters with Enhanced Linearity Current Status and Future Trends for Si and Compound MMICs in Millimeter-Wave Regime and Related Issues for System on Chip (SOC) and/or System in Package (SIP) Applications Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs Characterization and Modeling of Microstrip Transmission Lines with Slow-Wave Effect
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1