{"title":"行波半导体放大器增益饱和特性的评估","authors":"In Kim, K. Uppal, P. Dapkus","doi":"10.1109/LEOS.1996.571523","DOIUrl":null,"url":null,"abstract":"In this paper, we describe a more accurate method to calculate the gain saturation behavior in a QW semiconductor laser traveling wave amplifier. Solving the rate equation for the carrier density in its steady state condition in conjunction with the gain and recombination rate calculated using Kane-type Hamiltonian, a rigorous relation is derived for the gain saturation behavior with increasing photon density.","PeriodicalId":332726,"journal":{"name":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of gain saturation behaviour in travelling wave semiconductor amplifiers\",\"authors\":\"In Kim, K. Uppal, P. Dapkus\",\"doi\":\"10.1109/LEOS.1996.571523\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we describe a more accurate method to calculate the gain saturation behavior in a QW semiconductor laser traveling wave amplifier. Solving the rate equation for the carrier density in its steady state condition in conjunction with the gain and recombination rate calculated using Kane-type Hamiltonian, a rigorous relation is derived for the gain saturation behavior with increasing photon density.\",\"PeriodicalId\":332726,\"journal\":{\"name\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.1996.571523\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.1996.571523","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of gain saturation behaviour in travelling wave semiconductor amplifiers
In this paper, we describe a more accurate method to calculate the gain saturation behavior in a QW semiconductor laser traveling wave amplifier. Solving the rate equation for the carrier density in its steady state condition in conjunction with the gain and recombination rate calculated using Kane-type Hamiltonian, a rigorous relation is derived for the gain saturation behavior with increasing photon density.